| 摘要 |
PURPOSE:To form an MIS structure by keeping the surface of a substance clean by a method wherein a deposited oxide film, to be used as a mask, is provided on the thermal oxide film on a compound semiconductor substrate, and after the thermal oxide film has been removed, another deposited oxide film is provided and an electrode is formed on the above mentioned oxide film. CONSTITUTION:An anodic oxide film 12, to be used as the first insulating film, is formed on an InSb substrate 11. On the above oxide film 12, the second SiO2 insulating film 13 of the prescribed pattern is formed on an active region and in its vicinity using an evaporation mask. Using the second insulating film 13 as a mask, the first insulating film is etched and a film 14 to be used for an Al electrode is provided. Accordingly, as the first insulating film is coated by the SiO2 film which is not damaged by the etching solution, the interface of the substrate and the insulating film to be formed on the substrate can be maintained clean, thereby enabling to increase the reliability of the subject semiconductor device. |
