| 摘要 |
PURPOSE:To obtain the flat epitaxial grown layer for the subject semiconductor laser element by a method wherein a buffer layer is constituted by a semiconduc tor material having a larger thermal expansion coefficient than Ga1-xAlxAs, and the thickness of the buffer layer is thinly formed. CONSTITUTION:A buffer layer consisting of IN0.49Ga0.51P as the first layer 10, a clad layer consisting of N-GaAlAs as the second layer 3, an active layer consisting of P(or N)-GaAlAs as the third layer 4, and a clad layer as the fourth layer 5 and the like are successively laminated. As the thermal expansion coefficient of the N-In0.49Ga0.51P to be used as a buffer layer 10 is approximately twice that of the Ga0.5Al0.5As layer, the Ga0.5Al0.5As layer having the thickness of about 10mum can be replaced by the In0.49Ga0.51P layer having the thickness of 5mum, which is half the stress absorbing function of the former. Accordingly, as the thickness of the buffer layer is reduced approximately by half, the terrace- formed growth can be suppressed, thereby enabling to improve the characteristics of the laser. |
