| 摘要 |
<p>PURPOSE:To obtain a superior orienting film by undercoating a specified silane compound on an electrode substrate and coating a silane compound having an alkoxy group and an org. group having F-substituted hydrocarbon or directly coating a mixture of both the silane compounds on the substrate and conducting orientation. CONSTITUTION:A compound represented by formulaI(where each of R1 and R2 is alkyl, and (m) is 0 or 1-3) is coated on a transparent glass substrate or a polymer film substrate, especially a glass substrate 51 having a thin film transistor array consisting of a gate electrode 52, an insulating layer 53, a drain electrode 54, an amorphous silicon semiconductor 55, source electrodes 54, 57 and n<+> layers 56, 56' to form an undercoat layer 58, and >=1 kind of silane compound represented by formula II (where R is alkyl such as CH3 or C2H5, and (n) is 1-20) is coated on the layer 58, dried, heat treated at a low temp., and rubbed to form an orienting film 59. A mixture of compounds of formulaeI, II may be directly coated on the substrate, dried, heat treated, and oriented. The resulting superior orienting film has high adhesion to all of >=2 kinds of materials forming the electrode substrate, reduces the unevenness of the substrate, and exerts no unfavorable influence on the electrodes and semiconductor.</p> |
