| 摘要 |
PURPOSE:To prevent the lowering in sensitivity of amplifier, by storing the charge on bit lines, when a drive timing pulse has a negative noise, in a sense amplifier of MOS dynamic RAM. CONSTITUTION:A driving timing pulse phi1 is at H level in timing P7, a bit line HA of a node A and a bit line HB of a node B are precharged to a power supply voltage V, and a node C is charged to V-VTH through a transistor T6. When phi5 changes from H to L level after phi4 is at L level, a negative noise is applied to the phi4 through a capacitor C5, the node C is lowered negative with a C1 and charges are applied through the T6. Further, when the phi4 returns to L level, the node C is increased to the level more than V-VTH with the C1. Thus, no charge is moved to the node C from a line HB through the T6, and the sensitivity of the sense amplifier is not lowered. |
