| 摘要 |
PURPOSE:To realize the high density of a picture element and to raise sensitivity and the quantity of operating charge, by forming a junction type overflow drain area on a channel stopper area and connecting this drain area to a transfer electrode. CONSTITUTION:On one main surface of the first conductive type, for instance a p type Si substrate 21, plural n type transfer channels 23R, 23G and 23B blocked in the horizontal direction by a p<+> type channel stopper area 22 are formed. On these transfer chennel,s an n<-> type channel stopper area 24 is formed. Also, on a part corresponding to a storage gate area of each channel of said area 24, a p<+> type overflow drain area 25 is formed so as to form p-n junction with said part. Subsequently, on a substrate 21, a bandlike transfer electrode 7 is arrayed and formed along a charge transfer direction A through an insulating film, and a part of said electrode is connected to the corresponding area 25. In this way, during the photodetecting period, if excess charge is generated in the channels 23R, 23G and 23B, the excess charge is absorbed by the area 25, and a stable state is obtained. |
