Schottky diode and process for its production.

摘要

A Schottky diode (1) is described in which a layer (3) consisting of the same semiconductor material as the substrate (2) is epitaxially deposited on a gallium arsenide or indium phosphide substrate (2) or on a similar substrate (2) made of binary, ternary or quaternary compound semiconductors which can be rendered semiinsulating by ion implantation, and in which insulator regions (4) are introduced into said epitaxially deposited layer (3) by hydrogen implantation. The invention is used in abrupt and hyperabrupt Schottky diodes.