| 摘要 |
PURPOSE:To obtain a MOSFET, which has high dielectric resistance and ON- resistance thereof is decreased, by forming a high dielectric resisting N<-> layer shaped between a gate and an N<+> type drain by a section having small impurity concentration and a section having large one. CONSTITUTION:An N<-> type well region 11 is formed to the drain section of a P<-> type Si substrate 1 having low impurity concentration, and a thin gate SiO2 film 4 is shaped. A poly Si layer is deposited, and a gate electrode 5 is formed. Donar impurity ions are implanted using the gate electrode 5 as a mask, and the high dielectric resisting layer 6a is shaped in a self-matching shape. The second high dielectric resisting layer 6b is molded employing a photo-resist mask 12. A thick insulating film 13 is formed, and an N<+> source region 14 and an N<+> drain contact section 15 are diffused. An Al electrode and a field plate 9 are shaped. |
