| 摘要 |
PURPOSE:To obtain a resist capable of forming a resist film high in sensitivity and strong in resistance when used for selective etching with fine and high precision, by incorporating a thermosetting resin with polymethyl methacrylate (PMMA) as a substrate. CONSTITUTION:A thermosetting resin, such as methylol melamine resin, is incorporated with PMMA in 5-10wt% of PMMA. For example, methylol melamine is added in 5-10wt% of PMMA to a toluene solution of PMMA having a molecular wt. of about 800,000, and the mixture solution obtained is coated on a Cr layer 2 provided on a glass substrate 1 and dried to form a resist film 3. This is prebaked under a nitrogen atmosphere at about 160 deg.C for about 60min, then subjected to selective electron beam irradiation, and developed in a mixture of ethyl acetate-isoamyl acetate to form a desired pattern. |
