| 摘要 |
PURPOSE:To obtain an insulating substrate, which has small voltage dependency and high dielectric resistance, by controlling the rate of dosage of oxygen to predetermined value and forming and putting a mixed layer of poly Si and an SiO2 layer when oxygen ions are injected into a Si substrate and an insulator is shaped. CONSTITUTION:When oxygen ions are implanted into the Si substrate, the mixed layer 5 of poly Si and SiO2 is put between a surface Si layer 1 and an SiO2 layer 2 by controlling the rate of dosage of oxygen to 12-17.5muA/cm<2>, acceleration energy to 120kV or higher and the quantity of dosage to 1.8X10<18>cm<-2> or higher. Accordingly, the voltage dependency of the insulating separation substrate is small, its leakage currents are minimized, and this method is useful for high dielectric resistance and complementing. |
