| 摘要 |
PURPOSE:To improve the yield of manufacturing a semiconductor device by removing the surface layer of an insulating film in a wide range from a resistor forming region after diffusing an emitter, then opening the prescribed region of the insulating film, implanting ions, and reducing the irregularity of the resistor. CONSTITUTION:An N type epitaxial layer 5 is grown, for example, on a P type substrate 1, and a P type isolating layer 6 is diffused to form an element forming region. Windows 8, 9 are opended at the oxidized film 7 on the resistor forming region of a substrate 1, and P type diffused layers 3, 4 are formed at the resistor terminal in the step of diffusing a base. Subsequently, the step of forming an emitter is performed, an oxidized film is formed in the holes 8, 9. In this state, the surface of the film 7 doped with an impurity on the region 11 covering the resistor 2 is photoetched. Then, the film 7 of desired resistor forming region is removed, and B ions are, for example, implanted to form a resistor 2. Thus, it can eliminate the undercut at the insulating film 7 on the implanted region, thereby reducing the irregularity of the resistor. |
