| 摘要 |
PURPOSE:To improve the photoelectric conversion efficiency of a solar cell and the like by growing sequentially an SnO2 film wherein recombination levels of minority carriers are increased and a low-resistance SnO2 film on an Si substrate in an oxidizing ambience containing Sn vapor or the like. CONSTITUTION:On an N type Si substrate or a thin Si film formed on another substrate is formed the SnO2 film in the oxidizing ambience containing Sn vapor or Sn compound vapor, whereby the photoelectric conversion element formed of heterojunction is prepared. As this SnO2 film, two layers thereof having different properties are grown. The first-layer SnO2 film is formed to be 10Angstrom or more thick at the temperature in the range of 320 deg.C or less and the recombination levels in the film are increased to raise open-circuit voltage Voc. As for the second-layer SnO2 film formed subsequently, the temperature for growing is raised to 340-420 deg.C, while N type impurity is applied to an ambience as occasion calls to make the film be of low resistance, so as for the high terminal voltage of 0.8 to be obtained at the time of outputting. By this constitution, the conversion efficiency can be improved and thus the device can be made fitted for the solar cell and the like. |
