| 摘要 |
PURPOSE:To obtain a high output voltage with monolithic structure by a method wherein a plurality of semiconductor light sensitive elements which are dielectrically isolated each other are formed on a semiconductor substrate and the elements are connected in series by metal wiring layers on the substrate. CONSTITUTION:A plurality of concave sections 2 with a depth of several microns to tens of microns are provided on the main surface of a desired conductive type Si substrate 1 and single crystal magnesia spinel (MgO.Al2O3) layers 3 with a depth of about 1mu are formed at the inside surfaces of the concave sections 2 and N<+> type Si epitaxial layers 4 with a depth of several microns contacting the layers 3 are attached to N type Si epitaxial regions 5 with a depth of several microns to tens of microns and solar cells 7 consisting of P type diffusion regions 6 with a depth of about 1,000Angstrom are formed on the surfaces of the regions 5 and semiconductor light sensitive elements are connected in series or series-parallel by insulating films 8 of SiO2 or the like and metal wiring layers 9 of Al or the like through contact windows 10 on the substrate whereon a plurality of solar cells 7 are formed. |
