| 摘要 |
PURPOSE:To prevent the damage of a wafer with a simple work by forming a relatively thick insulating film on the periphery of a semiconductor wafer, forming a relatively thin insulating film on the center and forming a mesa groove except the periphery of the wafer. CONSTITUTION:An insulating film 6 is, for example, formed on the overall surface of a wafer 14 in the manufacture of a semiconductor device, the film 6 at the center is then removed, and an insulating film is again formed on the overall surface. Since the film 6 remains on the periphery of the wafer 14 at this time, relatively thick film 61 is formed. Subsequently, the insulating film 62 on the mesa groove forming part is etched and removed. Since the film 61 on the periphery of the wafer 14 is formed thicker than the film 62 at this time, it remains. With the films 61, 62 as masks a metal groove 7 is formed, but since the mesa groove 7 is not formed on the periphery, the mechanical strength of the wafer 14 can be increased, thereby preventing the damage. |
