| 摘要 |
PURPOSE:To enable the discrimination of dark/light over a broad range and to increase the reliability of an image pickup device, by changing the potential of a control gate, in a device supplying the stored charge of a photoelectric conversion section to a signal readout section. CONSTITUTION:A drain region OFD absorbing charge to be overflowed is provided near a photoelectric conversion section PD, a gate electrode CG controlling a stored charge is provided between the drain region OFD and the section PD, and a control signal V1 changing the level for time in a storage period t1 of charge at the section PD is applied to the gate electrode CG, allowing to discriminate the response of a solid-state image pickup device to the intensity of light against a broad range of dark/light state in the same visual field. |
