| 摘要 |
PURPOSE:To obtain the composite SCR having high sensitivity and high dielectric resistance by thinly forming a main SCR section and one P type gate layer of a SCR for drive and arranging a P layer into an adjacent N type base layer in a latticed shape or reticulately. CONSTITUTION:A P<+> layer 11 is formed onto one surface of an N<-> type Si substrate 12, the P layers 13 are shaped to the other surface in latticed forms or reticulately, and an N<-> epitaxial layer 14 is formed. A P base layer 16 is shaped onto the layer 14 while being coupled with the peripheral P layers 13, and the P gate layer of an optical SCR for drive is formed shallowly at a central section. N<+> layers 17, 18 are shaped into P layers 15, 16, the P layers 15 and the N<+> layer 18 are connected, and electrodes A, G, K are attached. P-N junctions with the N<-> layer among the mutual P layers 13 are reversely biassed when forward bias as the SCR, and pinched off at some voltage or higher. When the forward direction breakdown voltage of the SCR of a light receiving section is set to value higher than voltage value at that time, dielectric resistance is kept by the P layer 16 of the main SCR and the N<-> layer before pinch-off, dielectric resistance is increased up to the breakdown voltage of P-N junctions among the N<-> layers 14, 12 and the P layers 14, 12 after pinch-off, and the gate layer 16 is thin, thus ensuring high sensitivity. |
