| 摘要 |
PURPOSE:To prevent uneven current due to parasitic inductance by providing conductor wiring, connecting to a main electrode of each chip, which is doubled back parallel in a device provided on a substrate having a plurality of semiconductor element chips in parallel connection. CONSTITUTION:Transistor chips 1a, 1b are made on a substrate 7 and collectors of the chips are connected to a common collector terminal 2 and the emitters to the common emitter terminal 3 and the bases to the common base terminal 4. The emitters of the chips 1a, 1b and the common emitter terminal 3 are connected by the emitter connecting conductor 5 and a doubling back conductor 9 that makes u shap with the conductor 5. The currents that flow in the conductor 5 and the conductor 9 are opposite in directions which offset parasitic inductance making the same amount of current flows in the chips 1a and 1b. |
