| 摘要 |
PURPOSE:To enable free miniaturization of a device without considering an area of a resistive element part, by connecting an upper conductive layer with a lower conductive layer via a contact hole and forming a PN junction longitudinally in a semiconductor inside the contact hole or in a space formed between the semiconductor inside the contact hole and a semiconductor substrate. CONSTITUTION:A N type diffusion region 2 which serves as a lower conductive layer and a silicon oxidizing film 3 which serves as a layer insulating film are formed on a surface of a P type single-crystal silicon substrate 1. A tungsten silicide wiring 9, which is connected with the N type diffusion region 2 via a contact hole 4 formed in the silicon oxidizing film 3, is formed as an upper conductive layer on the silicon oxidizing film 3. Further, this contact hole 4 is filled with P type polycrystalline silicon 7 and N type polycrystal silicon 8. Such composition functions to form NPN junction between the tungsten silicide wiring 9 and the N type diffusion region 2, and backward PN junction is formed across the conductive layers on application of both positive and negative voltages, so that a high resistive element in accordance with reverse bias leakage of the PN junction can be formed. |
