| 摘要 |
PURPOSE:To make it possible to effect annealing without taking out a wafer from a chemical vapor deposition (CVD) device, by providing the CVD device with a pre-heated gas introduction pipe and introducing pre-heated gas into CVD device after formation of chemical vapor growth film on the water. CONSTITUTION:A silicon wafer G is set within a reaction chamber D using a supporter H. Then, the pressure in the reaction chamber D is reduced, and a vapor growth is performed by introducing raw gas into the reaction chamber D through K. In succession, contents of the reaction chamber D is substituted by inactive gas. The inactive gas is introduced into the reaction chamber after preheating previously said gas with a gas preheater B. Lastly, the silicon wafer G is taken out. The chemical vapor growth film is annealed automatically by the preheated inactive gas, so no annealing after the wafer was taken out is required. |
