发明名称 MICROWAVE PLASMA TREATING DEVICE
摘要 PURPOSE:To equalize etching operation by providing small holes which communicate a plasma generating chamber and a plasma reacting chamber through a shielding plate which shields both chambers, and eliminating standing waves in microwaves generated in an oven. CONSTITUTION:The small holes 5 are perforated through the microwave shielding plate 4 which separates the microwave oven 1 into the plasma generating chamber 2 and the plasma reacting chamber 3, and said two chambers are communicated. In this constitution, the plasma enters into the reacting chamber through the communicating holes 5, but most of the microwaves are attenuated and scattered. Therefore the degree of further excitation of the plasma in the reacting chamber 3 is small, the reaction is performed at a low temperature in etching, and the temperature can be increased when the resist film is incinerated.
申请公布号 JPS5796528(A) 申请公布日期 1982.06.15
申请号 JP19800172680 申请日期 1980.12.09
申请人 FUJITSU KK 发明人 YANO HIROSHI
分类号 H01L21/205;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 主分类号 H01L21/205
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