| 摘要 |
PURPOSE:To prevent the shift of the charged beam due to the electric charge stored in a resist pattern which has been exposed, by providing a conductive shielding plate having an opening whose area is slightly wider than the scanning area of the charged beam. CONSTITUTION:In the case the scanning area of the electron beam is 2X2mm., the opening in the conductive shielding plate is 2.2X2.2mm.. The electron beam is irradiated through the opening in the shielding plate 5 which is provided at the position 1mm. higher than a wafer 1. The wafer has the resist with a thickness of 2mum and a radius of 90mm.. In this method, the pattern in the exposed region is not subjected to the effect of the charge in the exposed area 2, and the maximum shift of the pattern is 0.5mum or less. |
