| 摘要 |
PURPOSE:To prevent occurrence of poor bubble transfer operation by forming a resin layer on a conductor pattern, approximating the shape of the cross section of the layer to the shape after the formation of the conductor pattern by ion etching, and forming a driving pattern. CONSTITUTION:The conductor pattern 3 on a wafer is coated by resin solution by a spinner and the resin insulating layer 6 is formed. The shape of the cross section of the layer is approximated to the shape after the formation of the conductor pattern by the ion etching. In the ion etching, Ar is used as a gas, and DC sputtering is performed in the atomosphere of 10<-4>-10<-5> Torr in vacuum degree with the potential difference of 500-1,600eV being imparted. Ar ions are vertically implanted into the chip surface. In this method, the etching is performed to a broken line 9, a gentle slope is corrected fairly well, and an ideal cross sectional structure is obtained. A driving pattern comprising Permalloy is formed thereon. |
