| 摘要 |
PURPOSE:To improve reliability by a method wherein an insulation layer under a bump electrode is composed of four layers, namely a thermal oxide film, an insulating film as an impurity region protecting film, an oxide film as an interior wiring region protecting film and a nitride film which are formed on the surface of a substrate successively in respective order. CONSTITUTION:An insulating layer in which an aperture is made as a through hole to an impurity diffused region 22 in a semiconductor substrate 21 such as Si of a semiconductor device with a vamp electrode is composed of a thermal oxide film 23 and a silicone nitride film 24 as a diffused region protecting layer. The first wiring layer 25a and an insulating layer 25b are formed by a method such as selective oxidization. The third and the fourth insulating films are formed as an Si oxide film 26a and a silicone nitride film 26b respectively by a method such as CVD. A contact hole connected to the first wiring layer 25a is formed and the second wiring layer is composed of a Ti film 27, Pt film 28 and an Au film 29 and the Au vamp electrode 30 is formed. A thermal stress given to the vamp electrode 30 is absorbed by adhesion of the silicone nitride film and the four-layer insulation. |
