SEMICONDUCTOR STORAGE CIRCUIT

摘要

PURPOSE:To write and read information normally even if a voltage drop occurs owing to the transient dependency of a diode, by composing a load of the diode and a resistance. CONSTITUTION:The load L6 of an information writing/reading control signal generating circuit A has the same resistance R6 as the resistances R1 and R2 of the loads L1 and L2 of a memory cell M to which the clamping Schottky diode D6 with the Schottky diodes D1 and D2 of the loads L1 and L2 is connected in parallel. Loads L7, L8 and L9 have the same resistances R7', and R8' and R9' as the resistances R1 and R2 of the memory M to which the same clamping Schottky diodes D7, D8 and D9 as the diodes D1 and D2 of the loads L1 and L2 are connected in parallel.