| 摘要 |
<p>PURPOSE:To obtain a light emitting element having preferable light emitting efficiency by limiting a plurality of current injection regions for the normal line of the light emitting surface to form a specific angle determined by the refractive indexes of a dielectric layer and a semiconductor light emitting element formed on the light emitting surface. CONSTITUTION:When the refractive inex of dielectric layer 10 formed on a light emitting surface is represented by n1 and the refractive index of a semiconductor light emitting element is represented by n2, an angle theta can be obtained by the formula theta tan<-1>(n1/n2). A plurality of current injection regions are limited to the normal direction of the light emitting surface. A metallic layer 11 is disposed except the current injection region on the layer 10, a dielectric layer 12 of refractive index n3 is then disposed on the layers 10, 11, and an inequality of n3>=n1 can be obtained. Thus an end face light emitting type semiconductor light emitting element capable of obtaining large light power with high light emitting efficiency can be formed.</p> |
