| 摘要 |
PURPOSE:To obtain a single-channel MOS amplifying circuit of a high gain and a wide operation range, by cascading the first amplifying stage, a level converting stage, the second amplifying stage, and output buffer stage successively to constitute the circuit. CONSTITUTION:A differential input stage 11, an input converting stage 12, the first amplifying stage 13, a level converting stage 14, the second amplifying stage 15, and an output buffer stage 16 are cascaded successively to constitute an operational amplifier. MOSFETs Q1-Q9 are the depletion type, and MOSFETs T1-T16 are the enhancement type. A substrate bias effect compensating circuit where the FETQ5 and FETT12 are connected in series is connected to the load FETQ6 of the second amplifying stage 15; and when the drain voltage of the driving FETT13 rises, the conductance of the FETT12 is lowered to raise the gate voltage of the FETQ6. |
