| 摘要 |
In addition to the usual field-effect transistor structures available in CMOS-type integrated circuitry, certain bipolar transistor structures are also available for use in linear amplifier circuits combining both bipolar and FET devices. One of the transistor structures available, i.e., a vertical transistor, has high current gain but its collector region, integral to the substrate, is committed to substrate potential. The other of the bipolar transistor structures available, i.e., a lateral transistor, has an uncommitted collector, but has low current gain. A cascade connection of both bipolar transistor types provides a composite transistor with high current gain and uncommitted collector useful in combination with field-effect transistor structures to form novel amplifier arrangements.
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