| 摘要 |
PURPOSE:To obtain an inner striped type semiconductor with a low threshold value by flowing current only in a striped groove making the inside of the groove an n type clad layer and the outside a p type clad layer. CONSTITUTION:An n type locked up layer 37, an n type clad layer 31, a light guiding layer 32, and an n type active layer 33, a clad layer 34 and a cap layer 31 are consecutively formed on an p type GaAs substrate 36 doped with Zn. A p type stripe groove 38 is formed extending from a part of the n clad layer 31 to the light guiding layer 32 by diffusing the Zn in the substrate 36 by heat treatment. Because the current flows only in the inside striped groove, a low threshold current semiconductor laser element is obtained. |
