| 摘要 |
PURPOSE:To enable the formation of a minute pattern having desired width, by applying later electron beams on a negative-type resist pattern formed on a substrate. CONSTITUTION:A negative-type resist film having excellent heat resistivity and being hardly dissolved is formed on a substrate, subjected to the application of electron beams, X-rays or ultraviolet rays and developed, whereby the negative-type resist pattern is formed. Next, electron beams are applied later to this resist pattern to deform the pattern into that in desired size. In a resist, such as the negative-type resist, which has excellent heat resistivity, dissolution by heat or electron beams is little, a pattern is thermally deformed uniformly and thereby the shape of the pattern can be changed. Therefore, the minute pattern having desired width can be formed. |
