| 摘要 |
PURPOSE:To make a thin film of Josephson junction element minutely and to control film thickness, etc., precisely by a method wherein after high-frequency discharge is made to reach stable condition, the superconducting thin film is exposed in an oxygen plasma atmosphere for the first time to make the thin film to be formed as an oxide thin film. CONSTITUTION:When high-frequency discharge is to be started, an electrode 11 for fixing of substrate of an element manufacturing device is drawn up upward, and the superconducting thin film 13 is made not to be exposed in oxygen plasma 14. Therefore the oxide thin film 13 is not formed on the substrate 12. Then a voltage fed from an electric power source 16 is applied to an electrode 10 for high-frequency discharge, the electrode 11 is made as not to discharge even when the electrode 10 is made to discharge, and after high-frequency discharge is made to reach stable condition, the electrode 11 is made to descend as to make the discharging faces of the electrodes 10, 11 to face with each other. The electrodes 10, 11 are made in electrically contacting condition to make both to have the same electric potential, discharge of the electrode 11 is made to start, and the film is exposed in plasma 14 to oxidize the surface of the superconducting thin film 13 stably. |
