| 发明名称 |
Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide |
| 摘要 |
The compounds TiSi2 and TaSi2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
|
| 申请公布号 |
US4332839(A) |
申请公布日期 |
1982.06.01 |
| 申请号 |
US19810227133 |
申请日期 |
1981.01.22 |
| 申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
LEVINSTEIN, HYMAN J.;MURARKA, SHYAM P.;SINHA, ASHOK K. |
| 分类号 |
H01L21/28;H01L21/768;H01L23/532;H01L29/49;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
