| 摘要 |
PURPOSE:To reduce the increase in a resistance value of an energizing layer, breaking of a wire, leakage, and destruction of a wear resistant layer as much as possible, by a method wherein a film, containing a specific compound, is coated on a part where the wear resistant layer, containing a given material, contacts the energizing layers. CONSTITUTION:A wear resistant layer 6 consists of a material, containing either B and C, B and Si, B and P or C and Si, such as BC, BSi, BP, BPSi, SiC. A thin film 7 is formed on a part where energizing layers 41 and 45 contact the wear resistant layer 6, and either of silicon oxide, silicone nitride, aluminum oxide, chrome oxide, and tantalum oxide is selected as the material of the thin film 7. The thin film 7 may be formed 0.1-10mum thick by a vacuum-evaporating, a spattering, or a chemical vapor phase growing method. |
