| 摘要 |
PURPOSE:To redude the junction area using a simple method for the subject semiconductor device by a method wherein an Si single crystal film is formed on an insulator substrate, and after a source and a drain regions have been provided, the single crystal film located between the above regions and a substrate is converted to an insulator by implanting an O2 or N2 ion. CONSTITUTION:A high resistance Si single crystal film 2 is grown on a sapphire substrate 1, an SiO2 film 10 is covered on the whole surface, an Si3N4 film 11 is formed in the center section of the film 10, the film 2 located at the section where the film 11 is not covered, is converted to an SiO2 by performing a heat treatment and an SiO2 film 12 which was formed in a body with the film 10 is obtained. Then, the film 11 is removed, a B<+> ion to be used for the prevention of a back-channel is implanted in such a manner that the peak will be positioned at the interface of the substrate 1, a thin gate insulating film 13 is coated on the island-shaped film 2, and a polycrsytalline Si gate electrode 14 is formed on the film 13. Subsequently, using the above electrode 14 as a mask, a P-ion is implanted, shallow N type source and drain regions 17 and 19 are formed on the film 2 pinching a channel 18, an O<+> ion is implanted through these regions, and the film 2 located between the regions 17 and 19 and the substrate 1 is converted to an oxide. |
