| 摘要 |
<p>PURPOSE:To maintain low thermal expansion property with smaller amount of misture by mixing carbide fiber shaped like a loop in a holding plate to which the substrate of a semiconductor is brazed, placing the carbide having higher vertical elasticity coefficient in the periphery than in the center. CONSTITUTION:Carbide fiber shaped like a loop or net is mixed in a metal or alloy holding plate 4 to which a chip 1 is br..azed with brazing filler 2. The holding plate includes Cu-C composite fiber, shaped like a loop, made by dipping into the slurry of Cu powder to make predetermined composition, and is hot- pressed. The carbide fiber of high vertical elasticity coefficient is plased in the center region 11 and the fiber with low elasticity coefficient is used placed in the periphery of the plate. The mixing rate for the both regions may be 45% or with the higher mixing rate at the periphery region. This method reduces amount of the carbide fiber as compared with the amount of necessary carbide fiber of low vertical elasticity coefficient to obtain required thermal expansion coefficient to improve the thermal conductivity.</p> |
