| 摘要 |
PURPOSE:To correct a mask by changing a metal layer on a substrate on a transparent glass into a transparent oxide by annealing using electron beam, laser beam, infrared or ultraviolet rays in heated oxide atmosphere. CONSTITUTION:A fine Cr mask pattern 2 on a glass substrate 1 is radiated by convergent laser beam while controlling atmosphere by O2 gas 3. The O2 gas is heated to keep the substrate at high temperatures to prevent hillock or peeling of a pattern due beam heating. The repetition of the irradiation will prove effective. This annealing evaporates a part of Cr leaving the most part being oxidized and almost transparent. Unnecessary part of the mask is removed as if etched chemically making the correction accurate in a short time. |
