| 摘要 |
PURPOSE:To form a correct pattern by mapping out a shifting quantity and applying a mask wherein the correction is performed to the mask pattern of photo etching according to said quantity. CONSTITUTION:Mapping out a shifting quantity in advance, the mask is applied, wherein the correction is performed to a mask pattern according to said quantity. And a silicon oxide layer 5 is attached on a silicon substrate 1 and an opening 5a is provided to diffuse, for instance, boron from said opening for forming an N<+> diffusion layer 4. Subsequently by the gaseous phase growth an N type epitaxial layer 2 is formed to make the N<+> diffusion layer 4 into an N<+> burried layer 4. Thereby, as the correction has been performed to the mask pattern anticipating pattern shift, the N<+> burried layer 4 is formed in the fixed position. |
