| 摘要 |
PURPOSE:To enable to obtain information of the deep impurity level contained in a semiconductor accurately and easily by a method wherein the DLTS method and the ICTS method are enable to be used simultaneously. CONSTITUTION:To measure the deep impurity level in the semiconductor from the variation of electric capacity of a depletion layer of P-N junction, etc., of the semiconductor, the measuring part consisting of a pulse generator 1 to generate voltage pulse, etc., a transient capacitance meter 2, a locking amplifier 3, an X-Y plotter 4 is constituted for a sample S according to the DLTS method, and the measuring part consisting of a high-frequency A/D converter 5, an interface 6, a computor 7, a display device 8, and an A/D converter 9 is constituted according to the ICTS method. Data of the deep impurity level is measured roughly about the unknown sample S according to the ICTS method, and then data of the accurate level of respective levels is obtained according to the ICTS method. Accordingly ability can be enhanced supplementing respective weak point as compared with the customary case to use the respective methods independently. |
