| 摘要 |
PURPOSE:To contrive to reduce forward directional voltage drop and to eliminate deterioration of withstand voltage of a semiconductor device by a method wherein solder of Al or Al-Si alloy is provided between a barrier metal of high melting point metal provided on the exposed face of a semiconductor substrate and Cu solder on a supporting electrode. CONSTITUTION:The barrier metal layer 2 consisting of Cr, for example, having high melting point and moreover having favorable adhesion with the semiconductor is provided on an n<+> type exposed surface of an Si wafer 1, and moreover Al solder or alloy solder 3 of Al-Si or Al-Ge is provided thereon. While Cu solder 5 is provided on the supporting electrode 4, and both are adhered to obtain the semiconductor device. Accordingly because diffusion of Cu atom into the semiconductor substrate is restrained, the device having no deterioration of withstand voltage can be obtained attaining reduction of forward directional voltage drop of the semiconductor device by low temperature adhesion resulted from combination of Al and Cu. |
