Semiconductor device and method for manufacturing the same.

摘要

A semiconductor device comprising a semiconductor element formed in a semiconductor region (200) of a first conductivity type with a gate electrode (222) made of refractory metal and an impurity region (226, 228). An insulating layer (218) is formed, at least partially buried, in a given region of the semiconductor region (200). Formed on the insulating layer is a metal interconnection layer (224) integral with the gate electrode made of refractory metal. In the semiconductor region right under the insulating layer (218), an impurity diffusion layer (214) having impurity of a second conductivity type is formed in contact with the insulating layer (218).