| 摘要 |
<p>1 MOGAB J C.J. 5 DEVICE FABRICATION BY PLASMA ETCHING Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of fluorocarbon-halogenation combinations as exemplified by CF3C1. The use of such combinations results in an improved control over the etching of silicon-containing surfaces, such as discrimination between the silicon-containing compositions (e.g., elemental Si, doped and undoped, or as a part on an intermetallic compound, such as a silicide) versus true silicon compounds (e.g. SiO2, SiNX etc.), and control over direction of etching relative to a vertical profile of walls of the portion or region being etched.</p> |
