| 摘要 |
PURPOSE:To produce a device with less dark current and sufficient photocurrent and shaped as desired by a method wherein films of CdS, CdTe, and Cd are successevely piled upon a transparent electrode provided substrate to which the other electrode is added after heat treatment. CONSTITUTION:A transparent electrode 2 is provided made of In2O3 or the like on a glass substrate 1 of, for example, quartz, whereupon a 1-5mum Cds film 3 is deposited with the substrate 1 kept at a temperature 200-400 deg.C. Next, a 1-3mum thick p type CdTe film 4 and then a 0.1-3mum thick Cd film 5 are formed at substrate temperatures of 150-300 deg.C and room temperature- 300 deg.C, respectively. Then the entire lamination is subjected to heat treatment at temperatures 400- 500 deg.C, which is followed by the formula of an An ohmic metal electrode 6 or the like to complete a thin film transistor. By this, a device suitable for use as an image scanning element in a facsimile equipment or the like is produced in which a reverse bias caused dark current is reduced in quantity and a photocurrent with its size corresponding to the quantity of light received is obtained. |
