发明名称 |
TREATING DEVICE FOR MICROWAVE PLASMA |
摘要 |
PURPOSE:To form uniform plasma by fitting a dielectric plate consisting of a dielectric which is large in relative dielectric constant and small in dielectric loss to the inner wall of the terminal part of a waveguide or the terminal part and the inner wall of the part adjacent to the terminal part. CONSTITUTION:Output electric power of a microwave oscillator 1 is led to a reaction vessel 3 made of quartz via a waveguide 2. Specified kind of gas is introduced into the reaction vessel 3 via a gas feed pipe 6 and discharged at constant flow rate through an exhaust pipe 7. Thereby the inside of the reaction vessel 3 is maintained at constant pressure and the introduced gas is made to plasma by means of microwave electric power and etching processing or depositing treatment of a thin film is performed on the surface of a sample 4 placed on a sample base 5. The cross-section of the waveguide 2 is a rectangular shape or a circular shape and its end is housed in the reaction vessel 3 and enlarged into a tapered shape to reduce the reflection of microwave electric power. |
申请公布号 |
JPS63190635(A) |
申请公布日期 |
1988.08.08 |
申请号 |
JP19870019482 |
申请日期 |
1987.01.29 |
申请人 |
DENKI KOGYO KK;SEIKO INSTR & ELECTRONICS LTD |
发明人 |
ISHIHORI KOUICHI;YAMAMOTO MANTARO;KASHIMA KOTARO;FUNAMOTO HIROYUKI |
分类号 |
B01J19/08;B01J19/12 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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