发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To reduce an operation current and suppress a nonpoint astigmation by a method wherein the conductivity types of the stripe-shape parts of an upper cladding layer and an active layer are converted into P-type and the parts whose conductivity types are not converted are used as a current blocking layer and a horizontal light guide layer. CONSTITUTION:N-type 1st cladding layer 2, an N-type or undoped active layer 3, 2nd cladding layer 4, a diffusion blocking layer 5 which has an inverse trapezoid stripe-shape trench 10 in which the 2nd cladding layer 4 is exposed and a P-type zinc supplying layer 6 which is formed on the exposed 2nd cladding layer 4, the side surfaces of the stripe-shape trench 10 and the diffusion blocking layer 5 and converts the conductivity types of the exposed part of the 2nd cladding layer 4 and the part of the active layer 3 under the exposed 2nd cladding layer 4 into P-type by Zn diffusion are formed on an N-type substrate 1 in this order. Therefore, the part of the 2nd cladding layer 4 whose conductivity type is not converted is used as a current blocking layer and the part of the active layer 3 whose conductivity type is not converted is used as a light guide layer against the part of the active layer 3 into which the P-type impurity is diffused and guides the light efficiently. With this constitution, an operation current can be reduced and a nonpoint astigmation can also be suppressed.
申请公布号 JPS63192287(A) 申请公布日期 1988.08.09
申请号 JP19870025031 申请日期 1987.02.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIMURA HIDE;TANAKA TOSHIO;TAKAMIYA SABURO;SAKAI TOSHIYA
分类号 H01S5/00 主分类号 H01S5/00
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