| 摘要 |
PURPOSE:To prevent noise induction and to reduce power consumption, by connecting an MOSFET which turns on/off by an inverter output in parallel with a pull- up(down) resistor, in an MOS inverter circuit connected with the pull-up(down) resistor for the input. CONSTITUTION:When a switch 11 turns on, an output 16 of an inverter 15 is at H level, and a P channel MOSFET turns off. In this case, a current flows via a pull- up resistor 12 and power consumption is less because a resistor 12 is high resistance. When the switch 11 turns off, the potential of an input signal line 14 is at VDD, and an MOSFET13 turns on an L level of the output 16 of the inverter 15. Taking on-resistance of the FET13 as several k ohms- several hundreds k phms, the induction of hum and noise on the input line 14 can be avoided. When a pull-down resistor 18 is used, an N channel MOSFET19 is connected in parallel. |
