发明名称 Photolacquer structure with photoresist layer - is on deep UV or electron positive resist
摘要 <p>The photolacquer structure is produced by irradiating photoresist on a substrate using actinic radiation. A layer that may be degraded by energetic radiation or by a dry etching process is formed on the substrate and the photoresist layer is formed on top of it. The degradable layer contains compounds that absorb UV and/or visible light. The degradable layer may be an electron positive resist or a deep UV resist and is thicker than the photoresist layer. The advantage lies in avoiding interference whilst at the same time maintaining good resolution factors.</p>
申请公布号 DE3036710(A1) 申请公布日期 1982.05.13
申请号 DE19803036710 申请日期 1980.09.29
申请人 SIEMENS AG 发明人 RUBNER,ROLAND,DIPL.-CHEM.DR.RER.NAT.;SIGUSCH,REINER,ING.;WIDMANN,DIETRICH,DR.-ING.;BIRKLE,SIEGFRIED,DIPL.-CHEM.DR.RER.NAT.
分类号 G03F1/00;(IPC1-7):05K3/06 主分类号 G03F1/00
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