| 摘要 |
PURPOSE:To guarantee the high sensitivity of a sense amplifier even if the precharging electric potential of a bit line receives noises by making the level of a driving signal for driving a sense amplifier an intermediate electric potential between a power source potential and an earth potential through a switching means. CONSTITUTION:A third N channel MOSFET Qj10 and a fourth N channel MOSFET Qj11, a third P channel MOSFET Qj12 and a fourth P channel MOSFET Qj13 are provided and the level of the sense amplifier driving signal is made to be the intermediate electric potential through the switching means. Therefore, the electric potential on bit lines BLj, the inverse of BLj and the level of the sense amplifier driving signal can be the intermediate electric potentials and the precharging electric potential on the bit line can be supplied through the switching means. Thus, a dynamic random access memory having a CMOS sense amplifier which can afford much internal noises can be obtained.
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