发明名称 PREPARATION OF MAGNETIC BUBBLE MEMORY
摘要 PURPOSE:To enable lamination of the second conductor pattern through the intermediary of a sufficiently-thin insulator layer, by applying anode oxidation with a mask of a thin insulator layer provided on the first conductor layer and by forming thereby the first conductor pattern having a flat surface. CONSTITUTION:An Al-Cu film 2 is evaporated on a magnetic film 1 formed by the liquid-phase epitaxial method and a CVD SiO2 film 5 is laminated in prescribed thickness thereon. An opening is made in the film 5 with a resist mask 6 applied, the Al-Cu layer 2 is subjected to anode oxidation, and thereby porous Al2O3 7 serving as a magnetic-bubble transmitting channel is prepared. The Al2O3 7 increases up to the position of an interface between the mask 6 and the film 5. The anode oxidation is conducted by using a solution of 1% of oxalic acid. Subsequently, the anode oxidation is made in the solution of ammonium borate in ethylene glycol, whereby the surface of the layer 7 is made into a composite Al2O3 layer 8. The mask 6 being removed, sufficiently thin CVD SiO2 9 can be formed afresh on a flat surface, and the element is completed by providing the second conductor pattern 4, an insulator layer 10, a magnetic-bubble detecting film 11 and a protection film 12.
申请公布号 JPS5773924(A) 申请公布日期 1982.05.08
申请号 JP19800150088 申请日期 1980.10.28
申请人 OKI DENKI KOGYO KK 发明人 TSURUOKA TAIJI;KAWAMURA KAZUTAMI
分类号 H01F41/14;H01F41/34 主分类号 H01F41/14
代理机构 代理人
主权项
地址