发明名称 PULSE MEASURING METHOD FOR THERMAL RESISTANCE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To read a measured values easily and precisely by displaying the measured value and a reference level (level 0) simultaneously by permitting a reference voltage pulse, which corresponds to the reference current level, to follow up a measurement pulse. CONSTITUTION:With a switch 11 off, the forward heating and measurement of a diode 4 to be measured are performed to obtain the same voltage current waveform with usual one, but when it is turned on, pulses from a pulse generator 9 for a reference value are sent to a control circuit 2, which causes the pulse to follow up a measurement pulse, so that the voltage and current waveforms of the diode to be measured are as shown by (e) and (f). Here, V0 and I0 are the voltage and current of the diode by reference-value pulses. Thus, the ground level is displayed all the time to obtain a measurement system for a pulse voltage having excellent precison without reference to variations in temperature and voltage.
申请公布号 JPS5773686(A) 申请公布日期 1982.05.08
申请号 JP19800149298 申请日期 1980.10.27
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 HARA HIROSHI;MAKISHIMA HIDEO
分类号 G01R31/26 主分类号 G01R31/26
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