| 摘要 |
<p>PURPOSE:To obtain a uniform plated film with excellent adhesive properties by forming a semiconductor layer on a substrate of an insulator and plating the layer with the desired metal in a specified thickness or below. CONSTITUTION:A layer of a semiconductor such as In2O3, SnO2 or TiO2 is formed on a substrate of an insulator such as glass, plastics, ceramics or a crystal body by CVD, sputtering, vapor deposition, dipping or other method. The substrate is then subjected to pretreatment for electroless plating by an ordinary method, and it is immersed in an electorless Ni bath to form an Ni plated film having <=2mum thicknes on the substrate. When the plating thickness exceeds 2mum, the adhesion is deteriorated.</p> |
