| 摘要 |
PURPOSE:To obtain a highly accurate and high speed processing of a resist pattern which includes fine pattern parts by combining two types of exposure. CONSTITUTION:When some parts 1 of a whole pattern have fine dimensions not more than 1mum and other parts 2 of the pattern have dimensions large enough to be resoluted by conventional light exposure, the parts 2 of the pattern are exposed first by the light exposure which can process with a high speed, then the fine pattern parts 1 are exposed by an electron beam. As the required time for the electron beam exposure is normally proportional to the number of patterns and the area of the pattern, the fewer the number of exposed parts and the smaller the area of the part, the shorter the required time. Thus, with above method, the time of the electron beam exposure is consumed only for exposure of the small number of, and small area of the fine pattern parts and the required time of the electron beam ex posure can be significantly reduced, so that the processing time can be significantly reduced compared with the electron beam exposure of the whole pattern. |
