| 摘要 |
PURPOSE:To easily produce a reliable semiconductor device by packing it with ceramics after coating a protective layer beforehand on the surface of its semiconductor chip. CONSTITUTION:A conducting layer 4 for an external connecting lead is formed on a ceramic insulating substrate 1, and a semiconductor chip 2 is die-bonded in a fixed position by using Au or Au-Si eutectic and then an Au wire 3 is wire bonded. High-purity silicon resin is dripped tearwise onto the surface of the semiconductor chip using a dispensor or injector to be spread into a thin film, and then a ceramic cap 7 thinly painted by epoxy resin 9 is covered. Next, it is heated at nearly 200 deg.C for about one hour for hardening and adhesion to complete hermetic sealing of a semiconductor device. |
